Effects of amino-terminated self-assembled monolayers on nucleation and growth of chemical vapor-deposited copper films

Thin Solid Films

Volumn 517, Issue 2, 2008, Pages 635-640

  Liu, Zheng Zheng ^a   Wang, Qi ^a   Liu, Xin ^a   Bao, Jie Qiong ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Amino terminated; Chemical vapor deposition; Copper film; Nucleation and growth; Self assembled monolayers

Indexed keywords

ABS RESINS; AMINATION; AMINES; ATOMIC PHYSICS; ATOMS; CONCENTRATION (PROCESS); COPPER; COPPER PLATING; ELECTRON ENERGY LEVELS; FILM GROWTH; METALLIC FILMS; MICROSCOPIC EXAMINATION; MISSILE BASES; MONOMERS; NUCLEATION; POLYMERS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; SILICON COMPOUNDS; SUBSTRATES; THICK FILMS; VAPORS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

AMINO-TERMINATED; ATOMIC FORCES; CHEMICAL VAPORS; COPPER CVD; COPPER FILM; COPPER FILMS; COPPER NUCLEATIONS; COPPER THIN FILMS; CU ATOMS; ELECTROMIGRATION RESISTANCES; MODIFIED SUBSTRATES; MULTILAYERED; NUCLEATION AND GROWTH; NUCLEATION AND GROWTHS; PREFERRED ORIENTATIONS; SUBSTRATE SURFACES; TERMINAL GROUPS; X-RAY DIFFRACTIONS; XRD ANALYSES;

CHEMICAL VAPOR DEPOSITION;

EID: 55049111084     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.07.030     Document Type: Article

References (30)

1. Wu Y.L., Hsieh M.H., and Hwang H.L. Thin Solid Films 483 (2005) 10
2. Takenaka K., Koga K., Shiratani M., Watanabe Y., and Shingen T. Thin Solid Films 506-507 (2006) 197
3. Kwak S.K., Chung K.S., Park I., and Lim H. Curr. Appl. Phys. 2 (2002) 205
4. Ko H., Jhin J., Byun D., Lee J., and Park D. IEEE Trans. Compon. Packag. Technol. 28 (2005) 781
5. Cho N.I., and Sul Y. Mater. Sci. Eng., B 72 (2000) 184
6. Broniatowski A. Phys. Rev. Lett. 62 (1989) 3074
7. Eustathopoulos N., Drevet B., and Muolo M.L. Mater. Sci. Eng., A 300 (2001) 34
8. Ahrens C., Depta D., Schitthelm F., and Wilhelm S. Appl. Surf. Sci. 91 (1995) 285
9. Ding P.J., Lanford W.A., Hymes S., and Murarka S.P. Appl. Phys. Lett. 64 (1994) 2897
10. Ramanath G., Carisson J.R.A., Greene J.E., Allen L.H., Hornback V.C., and Allman D.J. Appl. Phys. Lett. 69 (1996) 3179
11. Ramanath G., Greene J.E., Carisson J.R.A., Allen L.H., Hornback V.C., and Allman D.J. J. Appl. Phys. 85 (1999) 1961
12. Krishnamoorthy A., Chanda K., Murarka S.P., Ramanath G., and Ryan J.G. Appl. Phys. Lett. 78 (2001) 2467
13. Ramanath G., Cui G., Ganesan P.G., Guo X., Ellis A.V., Stukowski M., Vijayamohanan K., Doppelt P., and Lane M. Appl. Phys. Lett. 83 (2003) 383
14. Liu X., Wang Q., Wu S., and Liu Z.Z. J. Electrochem. Soc. 153 (2006) C142
15. Hu M., Noda S., Tsuji Y., Okubo T., Yamaguchi Y., and Komiyama H. J. Vac. Sci. Technol., A 20 (2002) 589
16. Ganesan P.G., Singh A.P., and Ramanath G. Appl. Phys. Lett. 85 (2004) 579
17. Kumbhar A.G., and Kishore K. Radiat. Phys. Chem. 66 (2003) 275
18. Huang X., Huang H., Wu N., Hu R., Zhu T., and Liu Z. Surf. Sci. 459 (2000) 183
19. Balachander N., and Sukenik C.N. Langmuir 6 (1990) 1621
20. Heise A., Menzel H., Yim H., Foster M.D., Wieringa R.H., Schouten A.J., Erb V., and Stamm M. Langmuir 13 (1997) 723
21. Ganesan P.G., Cui G., Vijayamohanan K., Lane M., and Ramanath G. J. Vac. Sci. Technol., B 23 (2005) 327
22. Lakshmanan S.K., and Gill W.N. Thin Solid Films 338 (1999) 24
23. Overbury S.H., Bertrand P.A., and Somorjai G.A. Chem. Rev. 75 (1975) 547
24. Venables J.A., Spiller G.D.T., and Hanbücken M. Rep. Prog. Phys. 47 (1984) 399
25. Kelber J.A., Niu C., Shepherd K., Jennison D.R., and Bogicevic A. Surf. Sci. 446 (2000) 76
26. Semaltianos N.G., Pastol J.L., and Doppelt P. Surf. Sci. 562 (2004) 157
27. Chen T.Y., Vaissermann J., Ruiz E., Sénateur J.P., and Doppelt P. Chem. Mater. 13 (2001) 3993
28. In: Kodas T.T., and Hampden-Smith M.J. (Eds). The Chemistry of Metal CVD (1994), VCH Publishers, New York
29. Senkevich J.J., Li B.-Q., Yang G.-R., Wang G.-C., and Lu T.-M. Electrochem. Solid-State Lett. 5 (2002) C94
30. Ryu C., Kwon K.-W., Loke A.L.S., Lee H., Nogami T., Dubin V.M., Kavari R.A., Ray G.W., and Wong S.S. IEEE Trans. Electron Devices 46 (1999) 1113