Self-assembled monolayers as Cu diffusion barriers for ultralow-k dielectrics

Electrochemical and Solid-State Letters

Volumn 9, Issue 7, 2006, Pages

  Ramana Murthy, B ^a   Yee, Wan Mun ^b   Krishnamoorthy, Ahila ^a   Kumar, R ^a   Frye, D C ^c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c DOW CHEMICAL COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; DIFFUSION COATINGS; POROUS SILICON; SELF ASSEMBLY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER BARRIER INTEGRITY; P-SILK FILMS; ULTRALOW-K DIELECTRICS;

COPPER;

EID: 33646866409     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2201988     Document Type: Article

References (5)

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3. G. Ramanath, G. Cui, P. G. Ganesan, X. Gu, A. V. Ellis, M. Stukowski, K. Vijayamohan, P. Doppelt, and M. Lane, Appl. Phys. Lett., 83, 383 (2003).
4. B. Ramana Murthy, M. Mukherjee-Roy, A. Krishnamoorthy, and D. C. Frye, IEEE Trans. Semicond. Manuf., 18, 174 (2005).
5. S. P. Murarka, Mater. Sci. Technol., 17, 749 (2001).