SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 42, Issue 6-7, 2010, Pages 1289-1294

Growth studies of Ti-based films deposited on Si and SiO2 using angle-resolved XPS

(1) Oswald, S a

a IFW DRESDEN (Germany)

Author keywords

Angle resolved XPS; Film growth; Phase formation; Titanium

Indexed keywords

ANGLE-RESOLVED XPS; BONDING STATE; DATA ANALYSIS; GROWTH PROPERTIES; NON DESTRUCTIVE; OXIDE FORMATION; PHASE FORMATION PROCESS; TIN FILMS; XPS MEASUREMENTS;

DATA REDUCTION; DEPTH PROFILING; MONOLAYERS; PHASE INTERFACES; SILICON COMPOUNDS; TANTALUM; TITANIUM; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM GROWTH;

EID: 77954292284 PISSN: 01422421 EISSN: 10969918 Source Type: Journal
DOI: 10.1002/sia.3208 Document Type: Conference Paper

Times cited : (12)

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