The room temperature growth of Ti on sputter-cleaned Si(1 0 0): Composition and nanostructure of the interface

Surface Science

Volumn 588, Issue 1-3, 2005, Pages 92-100

  Arranz, A ^a   Palacio, C ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

Low energy ion scattering; Metal semiconductor interfaces; Photoelectron spectroscopy; Silicides; Surface chemical reaction

Indexed keywords

MONOLAYERS; NANOSTRUCTURED MATERIALS; SILICON; SPUTTERING; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; GROWTH (MATERIALS); INTERFACES (MATERIALS); SURFACE REACTIONS; TEMPERATURE DISTRIBUTION;

ION SCATTERING SPECTROSCOPY (ISS); METAL-SEMICONDUCTOR INTERFACES; SILICDES; SURFACE CHEMICAL REACTIONS; LOW ENERGY ION SCATTERING; SILICIDES; SURFACE CHEMICAL REACTION;

TITANIUM;

EID: 22344450785     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.05.032     Document Type: Article

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