Formation of the Si/Ti interface

Applied Surface Science

Volumn 253, Issue 9, 2007, Pages 4283-4288

  Palacio, C ^a   Arranz, A ^a  

^a C XII   (Spain)

Author keywords

Low energy ion scattering; Metal semiconductor interfaces; Photoelectron spectroscopy; Silicides; Surface chemical reaction

Indexed keywords

COALESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE CHEMISTRY; TITANIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ION SCATTERING SPECTROSCOPY (ISS); LOW ENERGY ION SCATTERING; SURFACE KINETICS; TITANIUM SILICIDE; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS);

INTERFACES (MATERIALS);

EID: 33846815232     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.09.031     Document Type: Article

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