Interface formation and reactions at Ta-Si and Ta-SiO2 interfaces studied by XPS and ARXPS

Journal of Electron Spectroscopy and Related Phenomena

Volumn 137-140, Issue SPEC. ISS., 2004, Pages 229-233

  Zier, M ^a   Oswald, S ^a   Reiche, R ^a   Kozlowska, M ^a   Wetzig, K ^a  

^a IFW DRESDEN   (Germany)

Author keywords

Depth profiling; Diffusion barrier; Silicon; Silicon dioxide; Tantalum; XPS

Indexed keywords

DIFFUSION; INTERFACES (MATERIALS); MICROELECTRONICS; PARTIAL PRESSURE; SILICA; SYNTHESIS (CHEMICAL); ULTRAHIGH VACUUM;

DEPTH DISTRIBUTION; DEPTH PROFILING; DIFFUSION BARRIERS; RESIDUAL OXYGEN;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 2942628320     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2004.02.060     Document Type: Conference Paper

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