A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Hurle, D T J ^a  

^a Scotscraig House   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMENDED MODEL; ANALYSIS OF DATA; ANNEALING EFFECTS; ANTI-SITE DEFECT; ANTIMONIDES; COULOMBIC ATTRACTIONS; CRYSTAL DENSITY; DONOR DOPANTS; DONOR-DOPED; DOPANT SOLUBILITY; DOPED CRYSTALS; ELECTRONEUTRALITY; EQUILIBRIUM CONCENTRATION; EQUILIBRIUM VALUE; EXPERIMENTAL DATA; FIRST-PRINCIPLES; GAAS; GROUP III; HIGH CONCENTRATION; HIGH TEMPERATURE; HIGH-TEMPERATURE GROWTH; II-IV SEMICONDUCTORS; III-V COMPOUNDS; IMPROVED MODELS; INAS; INP; INTERSTITIALS; LATTICE PARAMETERS; LINEAR RANGE; LOW TEMPERATURES; MBE GROWTH; MOLECULAR BEAM EPITAXIAL; RATE OF INCREASE; RE-EVALUATION; RICH CONDITIONS; SOLIDUS CURVE; SOLUTION GROWN CRYSTAL; SUB-LATTICES; THERMO DYNAMIC ANALYSIS; THERMODYNAMIC MODEL; UNDERSATURATION; UNDOPED MATERIAL; VACANCY COMPLEXES; VACANCY CONCENTRATION; ZINC-BLENDE;

ANTIMONY COMPOUNDS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTALS; DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; PHASE EQUILIBRIA; PHOSPHORUS COMPOUNDS; POINT DEFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SOLUBILITY; TEMPERATURE; THERMOANALYSIS; THERMODYNAMICS; VACANCIES; ZINC;

DEFECTS;

EID: 77954220175     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3386412     Document Type: Article

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