Electrical activity of In and Ga impurities in CdTe

Journal of Alloys and Compounds

Volumn 371, Issue 1-2, 2004, Pages 10-14

  Fochuk, P ^a   Panchuk, O ^a   Korovyanko, O ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Crystal growth; Electronic transport; Impurities in semiconductors; Point defects; Semiconductors

Indexed keywords

CARRIER CONCENTRATION; COOLING; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRON TRANSPORT PROPERTIES; HIGH TEMPERATURE EFFECTS; INDIUM; MODAL ANALYSIS; PARAMETER ESTIMATION; POINT DEFECTS;

ELECTRICAL ACTIVITY; HIGH-TEMPERATURE DEFECT EQUILIBRIUM (HTDE); QUASICHEMICAL DEFECT REACTIONS (QCDR); SEMI-INSULATING MATERIALS;

CADMIUM ALLOYS;

EID: 2342646163     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2003.05.003     Document Type: Conference Paper

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