Variations in first principles calculated defect energies in GaAs and their effect on practical predictions

Bulletin of Materials Science

Volumn 26, Issue 1, 2003, Pages 169-173

  Deepak, ^a   Balamurugan, D ^a   Nandi, K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Ab initio calculations; Point defects; Semi insulating GaAs

Indexed keywords

CALCULATIONS; ELECTRON ENERGY LEVELS; ERRORS; IONIZATION; POINT DEFECTS;

AB INITIO CALCULATION; FORMATION ENERGIES; IONIZATION ENERGIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037288467     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02712808     Document Type: Article

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