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Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

Titanium silicide islands on atomically clean Si(100): Identifying single electron tunneling effects

(3) Tedesco, J L a Rowe, J E a Nemanich, R J b

a NORTH CAROLINA STATE UNIVERSITY (United States)

b ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CURVE; DEPLETION REGION; DOUBLE-BARRIER TUNNEL JUNCTION; FERMI LEVEL PINNING; I - V CURVE; NANOELECTRONIC DEVICES; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPY (STM); SCANNING TUNNELING SPECTROSCOPY; SCHOTTKY BARRIER LOWERING; SCHOTTKY BARRIERS; SI (100) SUBSTRATE; SI(1 0 0); SINGLE ELECTRON TUNNELING EFFECT; SINGLE-ELECTRON TUNNELING; SMALL ISLAND; SURFACE STATE; TITANIUM SILICIDE;

DEPOSITION; ELECTRON TUNNELING; NANOELECTRONICS; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICIDES; SPECTROSCOPY; SUBSTRATES; TITANIUM; TRANSIENTS; TUNNEL JUNCTIONS; VACUUM;

SINGLE ELECTRON TRANSISTORS;

EID: 77954189981 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3437049 Document Type: Article

Times cited : (9)

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