Fabrication of lateral single-electron tunneling structures by field-induced manipulation of Ag nanoclusters on a silicon surface

Applied Physics Letters

Volumn 75, Issue 1, 1999, Pages 139-141

  Park, Kang Ho ^a   Shin, Mincheol ^a   Ha, Jeong Sook ^a   Yun, Wan Soo ^a   Ko, Young Jo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000855585     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124326     Document Type: Article

References (15)

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14. r,(vacuum).
15. ,= I (vacuum), A = πX 11 ÅX11 Å, and assuming d= 10 Å.