SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 32, Issue 1-4 SPEC. ISS., 1996, Pages 297-315

Single-electron devices

(2) Ahmed, Haroon a Nakazato, Kazuo a

a HITACHI CAMBRIDGE LABORATORY (United Kingdom)

Author keywords

Coulomb blockade; Nanoelectronics; Nanostructure; Single electron; Tunnel junction

Indexed keywords

ELECTRONS; HETEROJUNCTIONS; NANOTECHNOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON ON INSULATOR TECHNOLOGY; TUNNEL JUNCTIONS;

SINGLE ELECTRONICS;

MICROELECTRONICS;

EID: 0030234910 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/0167-9317(95)00179-4 Document Type: Article

Times cited : (36)

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