Effects of discrete energy levels on single-electron tunneling in coupled metal particles

Applied Physics Letters

Volumn 82, Issue 21, 2003, Pages 3767-3769

  Wang, Bing ^a   Wang, Kedong ^a   Lu, Wei ^a   Wang, Haiqian ^a   Li, Zhenyu ^a   Yang, Jinlong ^a   Hou, J G ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; NANOSTRUCTURED MATERIALS; PALLADIUM; SCANNING ELECTRON MICROSCOPY;

SINGLE-ELECTRON TUNNELING (SET) DEVICES;

ELECTRON TUNNELING;

EID: 0038714290     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579121     Document Type: Article

References (19)

1. For a review, see, Single Charge Tunneling, NATO Advanced Study Institute, Series B: Physics Vol. 294, edited by H. Graben and M. H. Devoret (Plenum, New York, 1991).
2. D. V. Averin and K. K. Likharev, in Mesoscopic Phenomena in Solids, edited by B. L. Altshuler, P. A. Lee, and R. A. Webb (North-Holland, Amsterdam, 1991), p. 173.
3. D. C. Ralph, C. T. Black, and M. Tinkham, Phys. Rev. Lett. 74, 3241 (1995).
4. B. Wang, H. Q. Wang, H. X. Li, C. G. Zeng, J. G. Hou, and X. D. Xiao, Phys. Rev. B 63, 035403 (2001).
5. U. Banin, Y. W. Cao, D. Katz, and O. Millo, Nature (London) 400, 543 (1999).
6. M. Brust, M. Walker, D. Bethell, D. J. Schiffrin, and R. Whyman, J. Chem. Soc., Chem. Commun., 801 (1994).
7. R. L. Whetten, J. T. Khoury, M. M. Alvarez, S. Murthy, I. Vezmar, Z. L. Wang, P. W. Stephens, C. L. Cleveland, W. D. Luedtke, and U. Landman, Adv. Mater. (Weinheim, Ger.) 8, 428 (1996).
8. N. Toshima, T. Yonezawa, and K. Kushihashi, J. Chem. Soc., Faraday Trans. 89, 2537(1993).
9. K.-H. Park, J. S. Ha, W. S. Yun, M. Shin, and Y.-J. Ko, J. Vac. Sci. Technol. B 18, 2365 (2000).
10. D. V. Averin, A. N. Korotkov, and K. K. Likharev, Phys. Rev. B 44, 6199 (1991).
11. D. Davidović and M. Tinkham, Phys. Rev. Lett. 83, 1644 (1999).
12. K.-H. Park, J. S. Ha, W. S. Yun, M. Shin, K.-W. Park, and E.-H. Lee, Appl. Phys. Lett. 71, 1469 (1997).
13. X. Hu and P. von Blanckenhagen, Appl. Phys. A: Mater. Sci. Process. 68, 137 (1999).
14. P. Radojkovic, M. Schwartzkopff, M. Enaehescu, E. Stefanov, E. Hartmann, and F. Koch, J. Vac. Sci. Technol. B 14, 1229 (1996).
15. P. Radojkovic, M. Schwartzkopff, T. Gabriel, and E. Hartmann, Solid-State Electron. 42, 1287 (1998).
16. M. J. Mehl and D. A. Papaconstantopoulos, Phys. Rev. B 54, 4519 (1996).
17. C. G. Zeng, H. Q. Wang, B. Wang, J. L. Yang, and J. G. Hou, Appl. Phys. Lett. 77, 3595 (2000).
18. Y. Q. Xue, S. Datta, S. H. Hong, R. Reifenberger, J. I. Henderson, and C. P. Kubiak, Phys. Rev. B 59, R7852 (1999).
19. M. Amman, R. Wilkins, E. Ben-Jacob, P. D. Maker, and R. C. Jaklevic, Phys. Rev. B 43, 1146(1991).