Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

Journal of Physics D: Applied Physics

Volumn 40, Issue 2, 2007, Pages 547-550

  Zhu, J G ^a   Yang, X L ^a   Tao, M ^a  

^a University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CONTACT RESISTANCE; PASSIVATION; SELENIUM; SILICON; TITANIUM; TRANSMISSION LINE THEORY;

ANNEALING TEMPERATURES; CIRCULAR TRANSMISSION LINE METHOD; CONTACT RESISTIVITY; FOUR POINT PROBE;

OHMIC CONTACTS;

EID: 33947637152     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/2/031     Document Type: Article

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