Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2365-2370

  Park, Kang Ho ^a   Ha, Jeong Sook ^a   Yun, Wan Soo ^a   Shin, Mincheol ^a   Ko, Young Jo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ETCHING; FILM GROWTH; MONOLAYERS; OSCILLATIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THIN FILMS;

COULOMB STAIRCASES; SINGLE ELECTRON TUNNELING (SET);

SEMICONDUCTING FILMS;

EID: 0034266740     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1290367     Document Type: Article

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