Stress liner effects for 32-nm SOI MOSFETs with HKMG

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1706-1709

  Cai, Ming ^a   Ramani, Karthik ^b   Belyansky, Michael ^a   Greene, Brian ^a   Lee, Doug H ^c   Waidmann, Stephan ^d   Tamweber, Frank ^a   Henson, William ^a  

^a IBM RESEARCH   (United States)

^b Intermolecular Inc   (United States)

^c IBM MICROELECTRONICS   (United States)

^d GLOBALFOUNDRIES   (Germany)

Author keywords

High k; metal gate; MOSFETs; strained silicon; stress nitride

Indexed keywords

32-NM NODE; DRIVE CURRENTS; GATE-LEAKAGE CURRENT; HIGH-K DIELECTRIC; INTRINSIC PERFORMANCE; METAL GATE; METAL GATE MOSFETS; MOBILITY ENHANCEMENT; MOSFETS; SILICON-ON-INSULATOR MOSFETS; SOI-MOSFETS; STRAIN EFFECT; STRAINED SILICON; STRESS LINER;

DIELECTRIC MATERIALS; LEAKAGE CURRENTS; MOSFET DEVICES; NITRIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954035917     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2049076     Document Type: Article

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