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Volumn 132, Issue , 2006, Pages 365-368

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

b LUMILOG (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON MOBILITY; SAPPHIRE; SILICON CARBIDE; TRANSISTORS;

CRYSTAL QUALITY; STRAIN STATE;

GALLIUM NITRIDE;

EID: 33744900336 PISSN: 11554339 EISSN: 17647177 Source Type: Conference Proceeding
DOI: 10.1051/jp4:2006132070 Document Type: Conference Paper

Times cited : (8)

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