AlGaN/GaN HEMTs on (001) silicon substrates

Electronics Letters

Volumn 42, Issue 2, 2006, Pages 117-118

  Joblot, S ^a,b   Cordier, Y ^a   Semond, F ^a   Lorenzini, P ^a   Chenot, S ^a   Massies, J ^a  

^a CRHEA CNRS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON TUBES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON;

DRAIN CURRENTS; ELECTRON MOBILITY TRANSISTORS; HALL MOBILITY; SILICON SUBSTRATES;

PHOTOTRANSISTORS;

EID: 31344453694     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20063688     Document Type: Article

References (7)

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2. Johnson, J.W., Piner, E.L., Vescan, A., Therrien, R., Rajagopal, P., Roberts, J.C., Brown, J.D., Singhal, S., and Linthicum, K.L.: ' 12 W/mm AlGaN-GaN HFETs on silicon substrates ', IEEE Electron Device Lett., 2004, 25, p. 459-461
3. Joblot, S., Semond, F., Cordier, Y., Lorenzini, P., and Massies, J.: ' High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy ', Appl. Phys. Lett., 2005, 87, p. 133505
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7. Cordier, Y., Hugues, M., Lorenzini, P., Semond, F., Natali, F., and Massies, J.: ' Electron mobility and transfer characteristics in AlGaN/GaN HEMTs ', Phys. Status Solidi (C), 2005, 2, (7), p. 2720-2723