Post-annealing effects on device performance of AlGaN/GaN HFETs

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1855-1859

  Lee, Jaesun ^a   Liu, Dongmin ^a   Kim, Hyeongnam ^a   Lu, Wu ^a  

^a Ohio State University   (United States)

Author keywords

Breakdown; GaN; HEMT; Post annealing

Indexed keywords

ANNEALING; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GATE BIAS; MAXIMUM OSCILLATION FREQUENCY (FMAX); POST-ANNEALING; THERMAL MANAGEMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3142780197     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.026     Document Type: Conference Paper

References (8)

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