Digital Etching for Highly Reproducible Low Damage Gate Recessing on AlGaN/GaN HEMTs

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 461-469

  Buttari, D ^a   Heikman, S ^a   Keller, S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; DIGITAL CONTROL SYSTEMS; ELECTRIC BREAKDOWN; ETCHING; GALLIUM NITRIDE; GATES (TRANSISTOR);

DIGITAL ETCHING TECHNIQUES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242365520     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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