Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Solid-State Electronics

Volumn 52, Issue 6, 2008, Pages 962-967

  Gao, Haiyong ^a   Yan, Fawang ^a   Zhang, Yang ^a   Li, Jinmin ^a   Zeng, Yiping ^a   Wang, Guohong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Inductively coupled plasma etching; InGaN GaN multiple quantum wells; Light emitting diode; Wet etching

Indexed keywords

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM WELLS; WET ETCHING;

GAN MULTIPLE QUANTUM WELLS; INDUCTIVELY COUPLED PLASMA ETCHING; LIGHT EXTRACTION;

LIGHT EMITTING DIODES;

EID: 42749084988     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.12.013     Document Type: Article

References (16)

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