Nonmagnetic semiconductor spin transistor

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2937-2939

  Hall, K C ^a   Lau, Wayne H ^a   Gundogdu K ^a   Flatté, Michael E ^a   Boggess, Thomas F ^a  

^a UNIVERSITY OF IOWA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

SPIN SPLITTING;

TRANSISTORS;

EID: 0142229528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1609656     Document Type: Article

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29. 29 For a spin valve, the center gate in Fig. 1(a) is not needed and the lateral contacts on the collector RTT structure must extend across the InAs 2DEG. This would be facilitated by choosing the transport direction in the InAs channel along [001], i.e., at right angles to the side contacts on the RIT structures.