Reverse selectivity - High silicon nitride and low silicon dioxide removal rates using ceria abrasive-based dispersions

Journal of Colloid and Interface Science

Volumn 347, Issue 2, 2010, Pages 267-276

  Veera Dandu, P R ^a   Devarapalli, V K ^b   Babu, S V ^a,b  

^a Clarkson University   (United States)

^b CLARKSON UNIVERSITY   (United States)

Author keywords

Ceria; CMP; Colloids; High silicon nitride over silicon dioxide removal; Polymers; Reverse selectivity

Indexed keywords

CATIONIC POLYMERS; CERIA; CERIA PARTICLES; DIALLYLDIMETHYLAMMONIUM CHLORIDES; DOWN PRESSURE; ELECTROSTATIC INTERACTIONS; FRICTION COEFFICIENTS; HIGH SILICON NITRIDE OVER SILICON DIOXIDE REMOVAL; POLYMER ADDITIVE; REMOVAL RATE; SILICON DIOXIDE; SILICON DIOXIDE FILM; SILICON NITRIDE POWDERS; UV-VIS SPECTROSCOPY; WEIGHT RATIOS; WEIGHT-AVERAGE MOLECULAR WEIGHT;

ABRASIVES; ADSORPTION; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; CHLORINE COMPOUNDS; CONTACT ANGLE; DISPERSIONS; DYES; FRICTION; GRAVIMETRIC ANALYSIS; POLISHING; POLYMER FILMS; SILICA; SILICON NITRIDE; ULTRAVIOLET SPECTROSCOPY; ZETA POTENTIAL;

POLYMERS;

CERIUM OXIDE; COPOLYMER; POLY(ACRYLIC ACID CO DIALLYLDIMETHYLAMMONIUM CHLORIDE); SILICON DIOXIDE; SILICON NITRIDE; UNCLASSIFIED DRUG;

ADSORPTION; ARTICLE; CHEMICAL BINDING; CHEMICAL INTERACTION; CONTACT ANGLE; CONTROLLED STUDY; ENANTIOSELECTIVITY; FILM; FRICTION; ISOTHERM; MOLECULAR WEIGHT; PRIORITY JOURNAL; STATIC ELECTRICITY; SURFACE PROPERTY; THERMOGRAVIMETRY; ULTRAVIOLET SPECTROSCOPY; ZETA POTENTIAL;

EID: 77953229040     PISSN: 00219797     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcis.2010.03.071     Document Type: Article

References (78)

1. Krishnan M., Nalaskowski J.W., Cook L.M. Chem. Rev. 2010, 110:178.
2. Landis H., Burke P.C.W., Hill W., Hoffman C., Kaanta C., Koburger C., Lange W., Leach M., Luce S. Thin Solid Films 1992, 220:1.
3. Lu Z., Lee S.-H., Gorantla R.K., Babu S.V., Matejavić E. J. Mater. Res. 2003, 18:2323.
4. Y. Moon, R. Venigalla, C. Sheraw, J. Strane, C. Wang, J. Cummings, D. Canaperi, D. Lee, L. Hall, L. Economikos, in: Proc. International Conference of Planarization/CMP Technology, Japan Planarization and CMP Technical Committee, Japan, 2009, p. 183.
5. Kim Y.-S., Lee S.-H., Shin S.-H., Han S.-H., Lee J.-Y., Lee J.-W., Han J., Yang S.-C., Sung J.-H., Lee E.-C., Song B.-Y., Lee D.-J., Bae D.ss-I., Yang W.-S., Park Y.-K., Lee K.-H., Roh B.-H., Chung T.-Y., Kim K., Lee W. VLSI Tech. Dig. 2003, 11.
6. N.Y. Ju, Korean Patent 026500, 2003).
7. Fiorenza J.G., Scholvin J., del Alamo J.A. IEEE Electron Dev. Lett. 2003, 24:11.
8. William G. America, S.V. Babu, P.R. Dandu Veera, Chemical Mechanical Polishing of Silicon Nitride, US Provisional patent application 60/996445, 2007.
9. Overview of Metal Gate FET and Application of Dual Metal Gate (DMG) Concept to CMOS and Single Gate MOSFET, Project by Chee, Joo Lien, May 2003.
10. J.A. Siddiqui, Q. Arefeen, C.L. Beck, US Patent Application 0047870 (2009).
11. Kim S.-K., Sohn H.-M., Paik U., Katoh T., Park J.-G. Jpn. J. Appl. Phys. 2004, 43:7434.
12. Carter P.W., Johns T.P. Electrochem. Solid-State Lett. 2005, 8:G218.
13. Hu Y.Z., Guttmann R.J., Chow T.P. J. Electrochem. Soc. 1998, 145:3919.
14. Hu Y.Z., Guttmann R.J., Chow T.P., Bussman K., Cheng S.F., Prinz G.A. Thin Solid Films 1997, 308:555.
15. Laarz E., Lenninger G., Bergström L. Key Eng. Mater. 1997, 132:285.
16. Zhmud B.V., Bergström L. J. Colloid Interface Sci. 1999, 218:582.
17. A. Natarajan, P.R. Dandu Veera, S.V. Babu, in: International Conference on Planarization/CMP Technology, VDE VERLAG GMBH, Berlin, October 2007.
18. S.V. Babu, A. Natarajan, US Patent 7629.758, 2009.
19. H.H. Kim, S.I. Lee, US Patent 6746314 B2, 2004.
20. Kim S.-K., Sohn H.-M., Paik U., Katoh T., Park J.-G. Jpn. J. Appl. Phys. 2004, 43:7434.
21. J.M. Dysard, T.P. Johns, US Patent Pub. 0108326 A1, 2006.
22. H.-S. Park, US Patent Pub. 0203252 A1, 2004.
23. P.W. Carter, T.P. Johns, US Patent Pub. 0099814 A1, 2006.
24. S.V. Babu, P.R. Dandu Veera, V.K. Devarapalli, G. Criniëre, US Provisional Patent Application 61/194497, 2008.
25. Philipossian A., Lee H., Babu S.V., Patri U., Hong Y., Economikos L., Goldstein M., Zhuang Y., Borucki L. ECS Trans. 2006, 2:515.
26. Dandu Veera P.R., Natarajan A., Hegde S., Babu S.V. J. Electrochem. Soc. 2009, 156:H487.
27. Dandu Veera P.R., Peddeti Shivaji, Babu S.V. J. Electrochem. Soc. 2009, 156:H936.
28. Jeong H., Kim H., Lee S., Dornfeld D. CIRP Ann. - Manuf. Technol. 2006, 55:325.
29. Sehgal A., Lalatonne Y., Berret J.-F., Morvan M. Langmuir 2005, 21:9359.
30. Hackley V.A. J. Am. Ceram. Soc. 1998, 81:2421.
31. Kang H.G., Park H.S., Paika U., Park J.G. J. Mater. Res. 2007, 22:777.
32. Kazue K., Masashi M. Proc. Jpn. Acad. Ser. B: Phys. Biol. Sci. 2001, 77:115.
33. Kang M.C., Kim J.J., Moon D.-K. Jpn. J. Appl. Phys. 2005, 44:5949.
34. Kang H.G., Katoh T., Park J.G. J. Korean Phys. Soc. 2005, 47:705.
35. J.T. Abiade, PhD thesis, University of Florida, 2004.
36. America W.G., Babu S.V. Electrochem. Solid State Lett. 2004, 7:G327.
37. Sambasivudu K., Reddy Y.B., Yadav J.S., Sabitha G., Shailaja D. Int. J. Polym. Mater. 2008, 57:891.
38. Willett R.L., Baldwin K.W., West K.W., Pfeiffer L.N. PNAS 2005, 102:7817.
39. Boumahraz M., Davydov V.Ya., Kiselev A.V. Chromatographia 1982, 15:751.
40. Patthey L., Rensmo H., Persson P., Westermark K., Vayssarieres L., Stashans A., Petersson A., Bruhwiler P.A., Siegbahn H., Lunnel S., Martensson N. J. Chem. Phys. 1999, 110:5913.
41. Persson P., Lunnel S. Sol. Energy Mater. Sol. Cells 2000, 63:139.
42. Persson P., Ojamae L. Chem. Phys. Lett. 2000, 321:302.
43. Liufu S., Xiao H., Li Y. J. Colloid Interface Sci. 2005, 55.
44. Kim S.-K., Sohn H.-M., Paik U., Katoh T., Park J.-G. Jpn. J. Appl. Phys. 2004, 43:7434.
45. Inoue H., Fukke H., Katsumoto M., Konno K. J. Colloid Interface Sci. 1990, 138:92.
46. Lin Y.-H., Tseng H.-H., Wey M.-Y., Lin M.-D. Colloids Surf. A: Physicochem. Eng. Aspects 2009, 349:137.
47. Gölander C.G., Eriksson J.C. J. Colloid Interface Sci. 1987, 119:30.
48. Ren S.I., Yang S.R., Wang J.Q., Liu W.M., Zhao Y.P. Chem. Mater. 2004, 16:428.
49. Hong H., Lee S., Kim T., Chung M., Choi C. Appl. Surf. Sci. 2009, 255:6103.
50. Kelsall A. Glass Technol. 1998, 39:6.
51. Tolstobrov E.V., Tolstoi V.P., Murin I.V. Inorg. Mater. 2000, 36:904. (Translated from Niorganicheskie Material, 36 (2000) 1082).
52. Li C., Sun N., Ni J., Wang J., Chu H., Zhou H., Li M., Li Y. J. Solid State Chem. 2008, 181:2620.
53. Loschen C., Bromley S.T., Neyman K.M., Illas F. J. Phys. Chem. C 2007, 111:10142.
54. Kim S., Merkle R. J. Maier. Surf. Sci. 2004, 549:196.
55. Migani A., Neyman K.M., Illas F., Bromley S.T. J. Chem. Phys. 2009, 131:064701.
56. Tsunekawa S., Ishikawa K., Li Z.-Q., Kawazoe Y., Kasuya A. Phys. Rev. Lett. 2000, 85:3440.
57. Tsenekawa D., Sivamohan R., Ito S., Kasuya A., Fukuda T. Nanostruct. Mater. 1999, 17:1897.
58. Tsunekawa S., Fukuda T., Kasuya A. Surf. Sci. 2000, 457:L437.
59. Yang S., Gao L. J. Am. Chem. Soc. 2006, 128:9330.
60. Trovarelli A. Catalysis by Ceria and Related Materials 2001, Imperial College Press.
61. Wu L., Wiesmann H.J., Moodenbaugh A.R., Klie R.F., Zhu Y., Welch D.O., Suenaga M. Phys. Rev. B 2004, 69:125415/1.
62. Terribile D., Llorca J., Boaro M., de Leitenburg C., Dolcetti G., Trovarelli A. Chem. Commun. 1998, 17:1897.
63. Hailstone R.K., DiFrancesco A.G., Leong J.G., Allston T.D., Reed K.J. J. Phys. Chem. C 2009, 113:15155.
64. Hailstone R.K., DiFrancesco A.G., Reed K.J. Mater. Res. Soc. Symp. Proc. 2009, 1148:27.
65. Korsvik C., Patil S., Seal S., Self W.T. Chem. Commun. 2007, 10:1056.
66. Deshpande S., Patil S., Kuchibhatla S.V.N.T., Seal S. Appl. Phys. Lett. 2005, 87.
67. Gillis S.R., Bentley J., Carter C.B. Microsc. Microanal. 2003, 9:420-421.
68. Gillis S.R., Bentley J., Carter C.B. Appl. Surf. Sci. 2005, 241:61.
69. Gillis R., Bentley J., Carter C.B. Proc. Mater. Res. Soc. Symp. 2004, 818.
70. S.R. Gillis, PhD thesis, University of Minnesota, USA, 2004.
71. Bentley J., Gillis S.R., Carter C.B., Al-Sharab J.F., Cosandey F., Anderson I.M., Kotula P.J. J. Phys.: Conf. Ser. 2006, 26:69.
72. Cook L.M. J. Non-Cryst. Solids 1990, 120:152.
73. Li Y., Hariharaputhiran M., Babu S.V. J. Mater. Res. 2001, 16:1066.
74. Wang L., Zhang K., Song Z., Feng S. Appl. Surf. Sci. 2007, 253:4951.
75. Hoshino T., Kurata Y., Terasaki Y., Susa K. J. Non-Cryst. Solids 2001, 283:129.
76. D. Ryuzaki, Y. Hoshi, Y. Machii, N. Koyama, H. Sakurai, T. Ashizawa, in: Proc. International Conference on Planarizaiton/CMP Technology, Japan Planarization and CMP Technical Committee, The Japan Society of Precision Engineering (JSPE), Fukuoka, Japan, 2009, p. 31.
77. Gritsenko V.A., Wong H., Xu J.B., Kwok R.M., Petrenko I.P., Zaitsev B.A., Morokov Yu.N., Novikov Yu.N. J. Appl. Phys. 1999, 86.
78. Patnaik P. Handbook of Inorganic Chemical Compounds 2003, The McGraw-Hill Companies, Inc.