Chemical-mechanical polishing as an enabling technology for giant magnetoresistance devices

Thin Solid Films

Volumn 308-309, Issue 1-4, 1997, Pages 555-561

  Hu, Y Z ^a   Gutmann, R J ^a   Chow, T P ^a   Bussmann, K ^b   Cheng, S F ^b   Prinz, G A ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Chemical mechanical polishing; Contact resistivity; Giant magnetoresistance; Silicon nitride

Indexed keywords

COPPER; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETORESISTANCE; SILICON NITRIDE; SLURRIES;

CHEMICAL MECHANICAL POLISHING (CMP); GIANT MAGNETORESISTANCE (GMR);

POLISHING;

EID: 0031249668     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00495-1     Document Type: Article

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