Effects of abrasive particle size and molecular weight of poly(acrylic acid) in ceria slurry on removal selectivity of SiO2/Si3N4 films in shallow trench isolation chemical mechanical planarization

Journal of Materials Research

Volumn 22, Issue 3, 2007, Pages 777-787

  Kang, Hyun Goo ^a   Park, Hyung Soon ^b   Paik, Ungyu ^a   Park, Jea Gun ^a  

^a Hanyang University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; MOLECULAR WEIGHT; PARTICLE SIZE; SILICON COMPOUNDS; SLURRIES; SURFACE ROUGHNESS;

ABRASIVE PARTICLE SIZE; CERIA SLURRY; POLYACRYLIC ACID;

ACRYLICS;

EID: 33947252674     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0097     Document Type: Article

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