Selective chemical mechanical polishing of silicon dioxide over silicon nitride for shallow trench isolation using ceria slurries

Journal of the Electrochemical Society

Volumn 156, Issue 12, 2009, Pages

  Dandu Veera, P R ^a   Peddeti, Shivaji ^a   Babu, S V ^a  

^a Clarkson University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLANKET FILMS; CERIA SLURRY; CYCLIC AMINES; POLISHING SLURRIES; REMOVAL RATE; SHALLOW TRENCH ISOLATION; SHALLOW-TRENCH-ISOLATION PROCESS; SILICON DIOXIDE; SILICON NITRIDE FILM;

ADSORPTION; AMINES; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; CONTACT ANGLE; OXIDE FILMS; POLISHING; PYRIDINE; SEMICONDUCTING SILICON; SILICA; SILICON NITRIDE; SLURRIES; THERMOGRAVIMETRIC ANALYSIS; ZETA POTENTIAL;

CHEMICAL POLISHING;

EID: 70350726113     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3230624     Document Type: Article

References (38)

1. S. Nag and A. Chatterjee, Solid State Technol. 0038-111X, 99, 129 (1997); M. Nandkumar, Tech. Dig.-Int. Electron Devices Meet., 1998, 133.
2. W. G. America, P. R. Dandu Veera, and S. V. Babu, U.S. Pat. Appl. 60/996,445; Y. J. Noh, Korean Pat. 2,003,026,500 (2003).
3. H. Kodama and S. Iwasa, U.S. Pat. 5,575,837 (1996).
4. T.-H. Lee, K.-H. Lee, and T.-P. Yeh, U.S. Pat. 6,436,834 B1 (2002).
5. G. S. Grover and B. L. Mueller, U.S. Pat. 5,759,917 (1998).
6. W. R. Morrison and K. P. Hunt, U.S. Pat. 5,938,505 (1999).
7. M. Fukasawa, N. Koyama, Y. Kurata, K. Haga, T. Akutsu, and Y. Ootsuki, U.S. Pat. 0003925 A1 (2008).
8. R. Srinivasan, S. V. Babu, W. G. America, and Y.-S. Her, U.S. Pat. 6,627,107, 6,544,892, 6,468,910, and 6,491,843.
9. W. G. America, Ph.D. Thesis, Clarkson University, Potsdam, NY (2003).
10. S. Hegde, Ph.D. Thesis, Clarkson University, Potsdam, NY (2004).
11. W. G. America and S. V. Babu, Electrochem. Solid-State Lett., 7, G327 (2004). 10.1149/1.1817870 (Pubitemid 40015902)
12. W.-Q. Xu and S. Hegde, U.S. Pat. 0028450 A1 (2005).
13. P. W. Carter and T. P. Johns, U.S. Pat. 0144824 A1 (2006); Electrochem. Solid-State Lett., 8, G218 (2005). 10.1149/1.1951203
14. W. G. America, S. Hegde, A. Natarajan, T. Oja, and S. V. Babu, Unpublished work.
15. Y. N. Prasad and S. Ramanathan, Electrochem. Solid-State Lett., 9, G337 (2006). 10.1149/1.2351957 (Pubitemid 44652656)
16. P. R. Dandu Veera, A. Natarajan, S. Hegde, and S. V. Babu, J. Electrochem. Soc., 156, H487 (2009). 10.1149/1.3111811
17. M. E. Brown and P. K. Gallagher, Handbook of Thermal Analysis and Calorimetry: Recent Advances, Techniques and Applications, p. 397, Elsevier, New York (2007).
18. R. M. Horton, J. Am. Ceram. Soc. 0002-7820, 52, 121 (1969); 10.1111/j.1151-2916.1969.tb11195.x P. S. Wang, S. G. Malghan, and S. M. Hsu, J. Mater. Res., 8, 3168 (1993). 10.1557/JMR.1993.3168
19. A. Sehgal, Y. Lalatonne, J.-F. Berret, and M. Morvan, Langmuir, 21, 9359 (2005). 10.1021/la0513757 (Pubitemid 41433986)
20. S. Pandija, S. V. Babu, G. Criniere, and C. Ceintrey, in Proceedings of the International Conference on Planarization/CMP Technology, VDE VERLAG GMBH, Berlin, p. 257 (2007).
21. S. Hegde and S. V. Babu, Electrochem. Solid-State Lett. 1099-0062, 7, G316 (2004); 10.1149/1.1813231 S. Ramarajan, Y. Li, M. Hariharaputhiran, Y. S. Her, and S. V. Babu, Electrochem. Solid-State Lett., 3, 232 (2000). 10.1149/1.1391010
22. V. A. Hackley, J. Am. Ceram. Soc., 81, 2421 (2005).
23. H. G. Kang, H. S. Park, U. Paika, and J. G. Park, J. Mater. Res. 0884-2914, 22, 777 (2007); 10.1557/jmr.2007.0097 H. G. Kang, T. Katoh, and J. G. Park, J. Korean Phys. Soc., 47, 705 (2005).
24. K. Kazue and M. Masashi, Proc. Jpn. Acad., Ser. B: Phys. Biol. Sci. 0386-2208, 77, 115 (2001); 10.2183/pjab.77.115 M. C. Kang, J. J. Kim, and D.-K. Moon, Jpn. J. Appl. Phys., Part 1, 44, 5949 (2005). 10.1143/JJAP.44.5949
25. J. T. Abiade, Ph.D. Thesis, University of Florida, Gainesville, FL (2004).
26. L. Wang, K. Zhang, Z. Song, and S. Feng, Appl. Surf. Sci. 0169-4332, 253, 4951 (2007); 10.1016/j.apsusc.2006.10.074 S. Kim, R. Merkle, and J. Maier, Surf. Sci. 0039-6028, 549, 196 (2004); 10.1016/j.susc.2003.12.002 S. R. Gilliss, J. Bentley, and C. B. Carter, Mater. Res. Soc. Symp. Proc. 0272-9172, 818, M1.8.1 (2004); C. Loschen, S. T. Bromley, K. M. Neyman, and F. Illas, J. Phys. Chem. C, 111, 10142 (2007). 10.1021/jp072787m
27. Y. Sampurno, F. Sudargho, Y. Zhuang, T. Ashizawa, H. Morishima, and A. Philipossiana, Electrochem. Solid-State Lett., 12, H191 (2009). 10.1149/1.3098401
28. L. M. Cook, J. Non-Cryst. Solids, 120, 152 (1990). 10.1016/0022-3093(90) 90200-6
29. T. Hoshino, Y. Kurata, Y. Terasaki, and K. Susa, J. Non-Cryst. Solids, 283, 129 (2001). 10.1016/S0022-3093(01)00364-7 (Pubitemid 32408985)
30. Y. Z. Hu, R. J. Guttmann, and T. P. Chow, J. Electrochem. Soc., 145, 3919 (1998). 10.1149/1.1838893
31. Y. Z. Hu, R. J. Guttmann, T. P. Chow, K. Bussman, S. F. Cheng, and G. A. Prinz, Thin Solid Films, 308-309, 555 (1997). 10.1016/S0040-6090(97)00495-1
32. L. T. Kubota, A. Gambero, A. S. Santos, and J. M. Granjeiro, J. Colloid Interface Sci., 183, 453 (1996). 10.1006/jcis.1996.0568 (Pubitemid 26399619)
33. O. N. Kabanova, V. V. Serpinskii, and T. S. Yakubov, Russ. Chem. Bull., 29, 514 (1980). 10.1007/BF00961593
34. R. D. Ken, in Proceedings of the 16th International Symposium on Shock Tubes, VCH Verlagsgesellschaft, Weinheim (1987); Y. Xu and S. Zhu, Tetrahedron, 55, 13725 (1999). 10.1016/S0040-4020(99)00856-X
35. M. Boumahraz, V. Ya. Davydov, and A. V. Kiselev, Chromatographia, 15, 751 (1982). 10.1007/BF02261370
36. G. Busca, V. Lorenzelli, G. Porcile, M. I. Baraton, P. Quintard, and R. Marchand, Mater. Chem. Phys., 14, 123 (1986). 10.1016/0254-0584(86)90077-5 (Pubitemid 16476863)
37. L. Bergstrom and E. Bostedt, Colloids Surf., 49, 183 (1990). 10.1016/0166-6622(90)80101-9
38. R. R. Rao, H. N. Roopa, and T. S. Kannan, Bull. Mater. Sci., 1, 57 (2001). 10.1007/BF02704841