Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy

Applied Surface Science

Volumn 256, Issue 21, 2010, Pages 6350-6353

  Matsuda, Tokiyoshi ^a   Furuta, Mamoru ^a   Hiramatsu, Takahiro ^a   Furuta, Hiroshi ^a   Li, Chaoyang ^a   Hirao, Takashi ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Post annealing; Process; RF magnetron sputtering; Thermal desorption spectroscopy (TDS); Thin film transistor; X ray diffraction (XRD)

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; FLOW OF GASES; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; PROCESSING; THERMAL DESORPTION; THERMAL DESORPTION SPECTROSCOPY; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS; X RAY DIFFRACTION; ZINC OXIDE;

CONTROLLED NOT; DESORPTION TEMPERATURES; GAS-FLOW RATIO; O2 DESORPTION; POST ANNEALING; RF-MAGNETRON SPUTTERING; THERMAL DESORPTION SPECTROSCOPIES (TDS); ZNO THIN FILM;

THIN FILMS;

EID: 77953134113     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.04.015     Document Type: Article

References (36)

1. Minami T. Semicond. Sci. Technol. 20 (2005) S35-S44
2. Minami T., Sato H., Takata S., Ogawa N., and Mouri T. Jpn. J. Appl. Phys. 31 (1992) L1106-L1109
3. Agura H., Suzuki A., Matsushita T., Aoki T., and Okuda M. Thin Solid Films 445 (2003) 263-267
4. Ohya Y., Niwa T., Ban T., and Takahashi Y. Jpn. J. Appl. Phys. 40 (2001) 297-298
5. Masuda S., Kitamura K., Okumura Y., and Miyatake S. J. Appl. Phys. 93 (2003) 1624-1630
6. Carcia P.F., McLean R.S., Reilly M.H., Malajovich I., Sharp K.G., Agrawal S., and Nunes Jr. G. Mater. Res. Soc. Symp. Proc. 769 (2003) pp. H7.2.1-6
7. Carcia P.F., McLean R.S., Reilly M.H., and Nunes Jr. G. Appl. Phys. Lett. 82 (2003) 1117-1119
8. Nishii J., Hossain F.M., Takagi S., Aita T., Saikusa K., Ohmaki Y., Ohkubo I., Kishimoto S., Ohtomo A., Fukumura T., Matsukura F., Ohno Y., Koinuma H., Ohno H., and Kawasaki M. Jpn. J. Appl. Phys. 42 (2003) L347-L349
9. Hoffman R.L., Norris B.J., and Wagera J.F. Appl. Phys. Lett. 82 (2003) 733-735
10. Hoffman R.L. J. Appl. Phys. 95 (2004) 5813-5819
11. Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., and Hosono H. Nature 432 (2004) 488-492
12. Fortunato E.M.C., Barquinha P.M.C., Pimentel A.C.M.B.G., Gonçalves A.M.F., Marques A.J.S., Pereira L.M.N., and Martins R.F.P. Adv. Mater. 17 (2005) 590-594
13. Hirao T., Furuta M., Furuta H., Matsuda T., Hiramatsu T., Hokari H., Yoshida M., Ishii H., and Kakegawa M. J. Soc. Info. Display 15 (2007) 17-22
14. Hirao T., Furuta M., Hiramatsu T., Matsuda T., Li C., Furuta H., Hokari H., Yoshida M., Ishii H., and Kakegawa M. IEEE Trans. Electron Dev. 55 (2008) 3136-3142
15. Furuta M., Nakanishi T., Kimura M., Hiramatsu T., Matsuda T., Furuta H., Kawaharamura T., Li C., and Hirao T. Electrochem. Solid-State Lett. 13 (2010) H101-H104
16. Kamada Y., Fujita S., Hiramatsu T., Matsuda T., Nitta H., Furuta M., and Hirao T. Jpn. J. Appl. Phys. 49 (2010) 03CB03-1-5.
17. Aihara S., Seo H., Namba M., Watabe T., Ohtake H., Kubota M., Egami N., Hiramatsu T., Matsuda T., Furuta M., Nitta H., and Hirao T. IEEE Trans. Electron. Dev. 56 (2009) 2570-2576
18. Kohiki S., Nishitani M., and Wada T. J. Appl. Phys. 75 (1994) 2069-2072
19. Kohiki S., Nishitani M., Wada T., and Hirao T. Appl. Phys. Lett. 64 (1994) 2876-2878
20. Monakhov E.V., Christensen J.S., Manknys K., Svensson B.G., and Kuznetsov A.Y. Appl. Phys. Lett. 87 (2005) 191910-191912
21. Minami T., Nanto H., and Takata S. Appl. Phys. Lett. 41 (1982) 958-960
22. Schropp R.E.I., and Madan A. J. Appl. Phys. 66 (1989) 2027-2031
23. Lee J., Gao W., Li Z., Hodgson M., Metson J., Gong H., and Pal U. Appl. Phys. A80 (2005) 1641-1646
24. Ip K., Overberg M.E., Heo Y.W., Norton D.P., Peaton S.J., Stutz C.E., Luo B., Ren F., Look D.C., and Zavada J.M. Appl. Phys. Lett. 82 (2003) 385-387
25. Chang C.Y., and Sze S.M. ULSI Technology (1996), McGraw-Hill, New York
26. Furuta M., Hiramatsu T., Matsuda T., Li C., Furuta H., and Hirao T. Electrochem. Solid-State Lett. 12 (2009) K74-K77
27. Matsuda T., Furuta M., Hiramatsu T., Furuta H., and Hirao T. J. Vac. Sci. Technol. A 28 (2010) 135-138
28. Hiramatsu T., Furuta M., Furuta H., Matsuda T., Li C., and Hirao T. J. Cryst. Growth 311 (2009) 282-285
29. Li C., Kawaharamura T., Matsuda T., Furuta H., Hiramatsu T., Furuta M., and Hirao T. Appl. Phys. Exp. 2 (2009) 091601-1-3
30. Matsuda T., Furuta M., Hiramatsu T., Li C., Furuta H., Hokari H., and Hirao T. J. Cryst. Growth 310 (2008) 31-35
31. Furuta M., Hiramatsu T., Matsuda T., Li C., Furuta H., and Hirao T. J. Noncryst. Solids 354 (2008) 1926-1931
32. Li C., Furuta M., Matsuda T., Hiramatsu T., Furuta H., and Hirao T. Res. Lett. Mater. Sci. 2007 (2007) pp. 26459-1-26459-5
33. Matsuda T., Furuta M., Hiramatsu T., Furuta H., and Hirao T. J. Vac. Sci. Technol. A 25 (2007) 706-710
34. Furuta M., Hiramatsu T., Matsuda T., Furuta H., and Hirao T. Jpn. J. Appl. Phys. 46 (2007) 4038-4041
35. Hiramatsu T., Furuta M., Furuta H., Matsuda T., and Hirao T. Jpn. J. Appl. Phys. 46 (2007) 3319-3323
36. Musil J., Matous J., and Rajsky A. Czech. J. Phys. 43 (1993) 533-540