Static noise margin of ultrathin-body SOI subthreshold SRAM cells-an assessment based on analytical solutions of poisson's equation

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 2120-2127

  Hu, Vita Pi Ho ^a   Wu, Yu Sheng ^a   Fan, Ming Long ^a   Su, Pin ^a   Chuang, Ching Te ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Poisson's equation; SOI; Static noise margin (SNM); Subthreshold SRAM; Ultrathin body (UTB)

Indexed keywords

POISSON'S EQUATION; SOI; STATIC NOISE MARGIN (SNM); SUBTHRESHOLD SRAM; ULTRATHIN BODY (UTB);

CELL MEMBRANES; ELECTRIC POTENTIAL; INTEGRATED CIRCUIT LAYOUT; POISSON DISTRIBUTION; POISSON EQUATION; TRANSISTORS;

STATIC RANDOM ACCESS STORAGE;

EID: 69549086227     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026322     Document Type: Article

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