60-nm GaN/AlGaN DH-HEMTs with 1.0 Ω·mm Ron, 2.0 A/mm Idmax, and 153 GHz fT

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 167-168

  Shinohara, K ^a   Milosavljevic, I ^a   Burnham, S ^a   Cornon, A ^a   Hashimoto, P ^a   Wong, D ^a   Hu, M ^a   Butler, C ^a   Schmitz, A ^a   Willadsen, P J ^a   Boutros, K S ^a   Kazemi, H ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CHANNEL STRUCTURES; DEVICE-SCALING; DH-HEMTS; GAN CAP; GATE LENGTH; HIGH BREAKDOWN FIELDS; HIGH ELECTRON VELOCITY; HIGH FREQUENCY; ON-RESISTANCE; OUTPUT POWER; PARASITIC RESISTANCES; TECHNICAL CHALLENGES; W-BAND FREQUENCIES;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE CIRCUITS;

GALLIUM ALLOYS;

EID: 76549101941     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354968     Document Type: Conference Paper

References (3)

1. M. Micovic et al., CSICS 2008, p.10.
2. M. Micovic et al., IEDM 2004, p.807.
3. M. Higashiwaki et al., DRC 2006.