MBE growth and device characteristics of InAlN/GaN HFETs

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2598-2601

  Higashiwaki, M ^a   Matsui, T ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CURRENT DENSITY; GALLIUM NITRIDE; HALL EFFECT; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; TRANSCONDUCTANCE;

EXTRINSIC TRANSCONDUCTANCE; ROOM-TEMPERATURE ROOM-TEMPERATURE; SHEET ELECTRON DENSITY;

FIELD EFFECT TRANSISTORS;

EID: 27344456044     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461389     Document Type: Conference Paper

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