SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

Leakage behavior and conduction mechanisms of Ba(Ti0.85Sn 0.15)O3/Bi1.5Zn1.0Nb 1.5O7 heterostructures

(5) Wang, S J a Miao, S b Reaney, I M b Lai, M O a Lu, L a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; FOWLER-NORDHEIM TUNNELING; HETEROSTRUCTURES; HIGH ELECTRIC FIELDS; LEAKAGE MECHANISM; NEGATIVE BIAS; POLYCRYSTALLINE; POSITIVE BIAS; SI SUBSTRATES; SPACE-CHARGE-LIMITED CURRENT; TEMPERATURE RANGE;

BARIUM; ELECTRIC FIELDS; HETEROJUNCTIONS; OHMIC CONTACTS; PULSED LASER DEPOSITION; PULSED LASERS; SILICON COMPOUNDS; THIN FILMS; TIN; ZINC;

BARIUM COMPOUNDS;

EID: 77953007654 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3406136 Document Type: Article

Times cited : (25)

References (36)

1
- 0034771603
- Micromachined infrared detectors based on pyroelectric thin films
- DOI 10.1088/0034-4885/64/10/203
- P. Muralt, Rep. Prog. Phys. RPPHAG 0034-4885 64, 1339 (2001). 10.1088/0034-4885/64/10/203 (Pubitemid 32989733)
- (2001) Reports on Progress in Physics , vol.64 , Issue.10 , pp. 1339-1388
- Muralt, P.¹

2
- 1842484069
- JOELFJ 1385-3449. 10.1023/B:JECR.0000015661.81386.e6
- A. Tagantsev, V. Sherman, K. Astafiev, J. Venkatesh, and N. Setter, J. Electroceram. JOELFJ 1385-3449 11, 5 (2003). 10.1023/B:JECR.0000015661.81386.e6
- (2003) J. Electroceram. , vol.11 , pp. 5
- Tagantsev, A.¹ Sherman, V.² Astafiev, K.³ Venkatesh, J.⁴ Setter, N.⁵

3
- 29144456398
- Physics of thin-film ferroelectric oxides
- DOI 10.1103/RevModPhys.77.1083
- M. Dawber, K. M. Rabe, and J. F. Scott, Rev. Mod. Phys. RMPHAT 0034-6861 77, 1083 (2005). 10.1103/RevModPhys.77.1083 (Pubitemid 43038903)
- (2005) Reviews of Modern Physics , vol.77 , Issue.4 , pp. 1083-1130
- Dawber, M.¹ Rabe, K.M.² Scott, J.F.³

4
- 6344274692
- An uncooled infrared sensor of dielectric bolometer mode using a new detection technique of operation bias voltage
- DOI 10.1016/S0924-4247(02)00046-8, PII S0924424702000468
- M. Noda, K. Inoue, M. Ogura, H. Xu, S. Murakami, H. Kishihara, and M. Okuyama, Sens. Actuators, A SAAPEB 0924-4247 97-98, 329 (2002). 10.1016/S0924-4247(02)00046-8 (Pubitemid 34758741)
- (2002) Sensors and Actuators, A: Physical , vol.97-98 , pp. 329-336
- Noda, M.¹ Inoue, K.² Ogura, M.³ Xu, H.⁴ Murakami, S.⁵ Kishihara, H.⁶ Okuyama, M.⁷

5
- 33644772456
- 3 ferroelectric thin film for dielectric bolometer mode of infrared sensor
- DOI 10.1080/10584580590898992, Proceedings of the 16th International Symposium on Integrated Ferroelectrics, ISIF-16
- D. Popovici, S. Murakami, M. Matsumoto, M. Noda, and M. Okuyama, Integr. Ferroelectr. IFEREU 1058-4587 69, 247 (2005). 10.1080/10584580590898992 (Pubitemid 43338697)
- (2005) Integrated Ferroelectrics , vol.69 , pp. 247-255
- Popovici, D.¹ Murakami, S.² Matsumoto, M.³ Noda, M.⁴ Okuyama, M.⁵

6
- 65449139034
- JAPIAU 0021-8979. 10.1063/1.3097713
- S. J. Wang, L. Lu, M. O. Lai, and J. Y. H. Fuh, J. Appl. Phys. JAPIAU 0021-8979 105, 084102 (2009). 10.1063/1.3097713
- (2009) J. Appl. Phys. , vol.105 , pp. 084102
- Wang, S.J.¹ Lu, L.² Lai, M.O.³ Fuh, J.Y.H.⁴

7
- 56349106098
- JAPIAU 0021-8979. 10.1063/1.3009957
- S. N. Song, J. W. Zhai, L. N. Gao, X. Yao, T. F. Hung, and Z. K. Xu, J. Appl. Phys. JAPIAU 0021-8979 104, 096107 (2008). 10.1063/1.3009957
- (2008) J. Appl. Phys. , vol.104 , pp. 096107
- Song, S.N.¹ Zhai, J.W.² Gao, L.N.³ Yao, X.⁴ Hung, T.F.⁵ Xu, Z.K.⁶

8
- 59849093401
- APPLAB 0003-6951. 10.1063/1.3073743
- S. Song, J. Zhai, L. Gao, and X. Yao, Appl. Phys. Lett. APPLAB 0003-6951 94, 052902 (2009). 10.1063/1.3073743
- (2009) Appl. Phys. Lett. , vol.94 , pp. 052902
- Song, S.¹ Zhai, J.² Gao, L.³ Yao, X.⁴

9
- 0000175149
- Bismuth zinc niobate pyrochlore dielectric thin films for capacitive applications
- DOI 10.1063/1.1328408
- W. Ren, S. Trolier-McKinstry, C. A. Randall, and T. R. Shrout, J. Appl. Phys. JAPIAU 0021-8979 89, 767 (2001). 10.1063/1.1328408 (Pubitemid 33703448)
- (2001) Journal of Applied Physics , vol.89 , Issue.1 , pp. 767-774
- Ren, W.¹ Trolier-McKinstry, S.² Randall, C.A.³ Shrout, T.R.⁴

10
- 0036695289
- PRBMDO 0163-1829. 10.1103/PhysRevB.66.054106
- S. Kamba, V. Porokhonskyy, A. Pashkin, V. Bovtun, J. Petzelt, J. C. Nino, S. Trolier-McKinstry, M. T. Lanagan, and C. A. Randall, Phys. Rev. B PRBMDO 0163-1829 66, 054106 (2002). 10.1103/PhysRevB.66.054106
- (2002) Phys. Rev. B , vol.66 , pp. 054106
- Kamba, S.¹ Porokhonskyy, V.² Pashkin, A.³ Bovtun, V.⁴ Petzelt, J.⁵ Nino, J.C.⁶ Trolier-Mckinstry, S.⁷ Lanagan, M.T.⁸ Randall, C.A.⁹

11
- 0043012059
- JAPIAU 0021-8979. 10.1063/1.1590415
- R. Thayer, C. Randall, and S. Trolier-McKinstry, J. Appl. Phys. JAPIAU 0021-8979 94, 1941 (2003). 10.1063/1.1590415
- (2003) J. Appl. Phys. , vol.94 , pp. 1941
- Thayer, R.¹ Randall, C.² Trolier-Mckinstry, S.³

12
- 0142026444
- APPLAB 0003-6951. 10.1063/1.1613036
- J. Lu and S. Stemmer, Appl. Phys. Lett. APPLAB 0003-6951 83, 2411 (2003). 10.1063/1.1613036
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2411
- Lu, J.¹ Stemmer, S.²

13
- 17044366568
- Temperature dependence of the dielectric tunability of pyrochlore bismuth zinc niobate thin films
- DOI 10.1063/1.1853533, 032901
- A. K. Tagantsev, J. Lu, and S. Stemmer, Appl. Phys. Lett. APPLAB 0003-6951 86, 032901 (2005). 10.1063/1.1853533 (Pubitemid 40493487)
- (2005) Applied Physics Letters , vol.86 , Issue.3 , pp. 1-3
- Tagantsev, A.K.¹ Lu, J.² Stemmer, S.³

14
- 33846646583
- 7 (x=0, 0.05, and 0.10) thin films
- DOI 10.1063/1.2433762
- S. T. Zhang, Y. Zhang, M. H. Lu, Y. F. Chen, and Z. G. Liu, Appl. Phys. Lett. APPLAB 0003-6951 90, 042903 (2007). 10.1063/1.2433762 (Pubitemid 46184662)
- (2007) Applied Physics Letters , vol.90 , Issue.4 , pp. 042903
- Zhang, S.-T.¹ Zhang, Y.² Lu, M.-H.³ Chen, Y.-F.⁴ Liu, Z.-G.⁵

15
- 43349104176
- Low strain sensitivity of the dielectric property of pyrochlore Bi-Zn-Nb-O films
- DOI 10.1063/1.2919723
- H. Funakubo, S. Okaura, M. Suzuki, H. Uchida, S. Koda, R. Ikariyama, and T. Yamada, Appl. Phys. Lett. APPLAB 0003-6951 92, 182901 (2008). 10.1063/1.2919723 (Pubitemid 351662012)
- (2008) Applied Physics Letters , vol.92 , Issue.18 , pp. 182901
- Funakubo, H.¹ Okaura, S.² Suzuki, M.³ Uchida, H.⁴ Koda, S.⁵ Ikariyama, R.⁶ Yamada, T.⁷

16
- 57049167028
- JAPIAU 0021-8979. 10.1063/1.2991289
- K. Sudheendran, K. C. J. Raju, M. K. Singh, and R. S. Katiyar, J. Appl. Phys. JAPIAU 0021-8979 104, 104104 (2008). 10.1063/1.2991289
- (2008) J. Appl. Phys. , vol.104 , pp. 104104
- Sudheendran, K.¹ Raju, K.C.J.² Singh, M.K.³ Katiyar, R.S.⁴

17
- 60849102135
- JACTAW 0002-7820. 10.1111/j.1551-2916.2008.02878.x
- J. Ryu, K. -Y. Kim, J. -J. Choi, B. -D. Hahn, W. -H. Yoon, B. -K. Lee, D. -S. Park, D. -Y. Jeong, and C. Park, J. Am. Ceram. Soc. JACTAW 0002-7820 92, 524 (2009). 10.1111/j.1551-2916.2008.02878.x
- (2009) J. Am. Ceram. Soc. , vol.92 , pp. 524
- Ryu, J.¹ Kim, K.-Y.² Choi, J.-J.³ Hahn, B.-D.⁴ Yoon, W.-H.⁵ Lee, B.-K.⁶ Park, D.-S.⁷ Jeong, D.-Y.⁸ Park, C.⁹

18
- 33847206105
- SCIEAS 0036-8075. 10.1126/science.1129564
- J. F. Scott, Science SCIEAS 0036-8075 315, 954 (2007). 10.1126/science.1129564
- (2007) Science , vol.315 , pp. 954
- Scott, J.F.¹

19
- 0000862228
- APPLAB 0003-6951. 10.1063/1.126953
- P. C. Joshi and M. W. Cole, Appl. Phys. Lett. APPLAB 0003-6951 77, 289 (2000). 10.1063/1.126953
- (2000) Appl. Phys. Lett. , vol.77 , pp. 289
- Joshi, P.C.¹ Cole, M.W.²

20
- 9744275957
- APPLAB 0003-6951. 10.1063/1.1785861
- L. Yan, L. B. Kong, L. F. Chen, K. B. Chong, C. Y. Tan, and C. K. Ong, Appl. Phys. Lett. APPLAB 0003-6951 85, 3522 (2004). 10.1063/1.1785861
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3522
- Yan, L.¹ Kong, L.B.² Chen, L.F.³ Chong, K.B.⁴ Tan, C.Y.⁵ Ong, C.K.⁶

21
- 33845441439
- 7 sandwich films
- DOI 10.1063/1.2393093
- S. -X. Wang, M. -S. Guo, X. -H. Sun, T. Liu, M. -Y. Li, and X. -Z. Zhao, Appl. Phys. Lett. APPLAB 0003-6951 89, 212907 (2006). 10.1063/1.2393093 (Pubitemid 44892298)
- (2006) Applied Physics Letters , vol.89 , Issue.21 , pp. 212907
- Wang, S.-X.¹ Guo, M.-S.² Sun, X.-H.³ Liu, T.⁴ Li, M.-Y.⁵ Zhao, X.-Z.⁶

22
- 43349097530
- Bi1.5 Zn1.0 Nb1.5 O7 Mn -doped Ba0.6 Sr0.4 Ti O3 heterolayered thin films with enhanced tunable performance
- DOI 10.1063/1.2924278
- W. Fu, H. Wang, L. Cao, and Y. Zhou, Appl. Phys. Lett. APPLAB 0003-6951 92, 182910 (2008). 10.1063/1.2924278 (Pubitemid 351662021)
- (2008) Applied Physics Letters , vol.92 , Issue.18 , pp. 182910
- Fu, W.¹ Wang, H.² Cao, L.³ Zhou, Y.⁴

23
- 77749292156
- APPLAB 0003-6951. 10.1063/1.3309419
- S. J. Wang, S. Miao, I. M. Reaney, M. O. Lai, and L. Lu, Appl. Phys. Lett. APPLAB 0003-6951 96, 082901 (2010). 10.1063/1.3309419
- (2010) Appl. Phys. Lett. , vol.96 , pp. 082901
- Wang, S.J.¹ Miao, S.² Reaney, I.M.³ Lai, M.O.⁴ Lu, L.⁵

24
- 0003487117
- Chapman and Hall, New York
- A. Moulson and J. Herbert, Electroceramics: Materials, Properties, Applications (Chapman and Hall, New York, 1990).
- (1990) Electroceramics: Materials, Properties, Applications
- Moulson, A.¹ Herbert, J.²

25
- 0001139619
- JAPIAU 0021-8979. 10.1063/1.368888
- I. Stolichnov and A. Tagantsev, J. Appl. Phys. JAPIAU 0021-8979 84, 3216 (1998). 10.1063/1.368888
- (1998) J. Appl. Phys. , vol.84 , pp. 3216
- Stolichnov, I.¹ Tagantsev, A.²

26
- 0038757517
- PRBMDO 0163-1829. 10.1103/PhysRevB.59.16022
- B. Nagaraj, S. Aggarwal, T. K. Song, T. Sawhney, and R. Ramesh, Phys. Rev. B PRBMDO 0163-1829 59, 16022 (1999). 10.1103/PhysRevB.59.16022
- (1999) Phys. Rev. B , vol.59 , pp. 16022
- Nagaraj, B.¹ Aggarwal, S.² Song, T.K.³ Sawhney, T.⁴ Ramesh, R.⁵

27
- 65249171917
- JAPIAU 0021-8979. 10.1063/1.3093691
- F. Yan, I. Sterianou, S. Miao, I. M. Reaney, M. O. Lai, and L. Lu, J. Appl. Phys. JAPIAU 0021-8979 105, 074101 (2009). 10.1063/1.3093691
- (2009) J. Appl. Phys. , vol.105 , pp. 074101
- Yan, F.¹ Sterianou, I.² Miao, S.³ Reaney, I.M.⁴ Lai, M.O.⁵ Lu, L.⁶

28
- 0141817672
- PRVAAH 0096-8250. 10.1103/PhysRev.155.657
- J. Simmons, Phys. Rev. PRVAAH 0096-8250 155, 657 (1967). 10.1103/PhysRev.155.657
- (1967) Phys. Rev. , vol.155 , pp. 657
- Simmons, J.¹

29
- 33847123580
- Leakage mechanisms in BiFe O3 thin films
- DOI 10.1063/1.2535663
- G. W. Pabst, L. W. Martin, Y. -H. Chu, and R. Ramesh, Appl. Phys. Lett. APPLAB 0003-6951 90, 072902 (2007). 10.1063/1.2535663 (Pubitemid 46280706)
- (2007) Applied Physics Letters , vol.90 , Issue.7 , pp. 072902
- Pabst, G.W.¹ Martin, L.W.² Chu, Y.-H.³ Ramesh, R.⁴

30
- 0004005306
- 2nd ed. (Wiley, New York)
- S. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.¹

31
- 34548066514
- Temperature-dependent leakage mechanisms of PtBiFe O3 SrRu O3 thin film capacitors
- DOI 10.1063/1.2772666
- H. Yang, M. Jain, N. A. Suvorova, H. Zhou, H. M. Luo, D. M. Feldmann, P. C. Dowden, R. F. DePaula, S. R. Foltyn, and Q. X. Jia, Appl. Phys. Lett. APPLAB 0003-6951 91, 072911 (2007). 10.1063/1.2772666 (Pubitemid 47287649)
- (2007) Applied Physics Letters , vol.91 , Issue.7 , pp. 072911
- Yang, H.¹ Jain, M.² Suvorova, N.A.³ Zhou, H.⁴ Luo, H.M.⁵ Feldmann, D.M.⁶ Dowden, P.C.⁷ Depaula, R.F.⁸ Foltyn, S.R.⁹ Jia, Q.X.¹⁰

32
- 0038680585
- unpublished
- M. Biegalski, R. Thayer, J. Nino, and S. Trolier-McKinstry, Proceedings of IEEE ISAF, 2002 (unpublished), p. 7.
- (2002) Proceedings of IEEE ISAF , pp. 7
- Biegalski, M.¹ Thayer, R.² Nino, J.³ Trolier-Mckinstry, S.⁴

33
- 2942549801
- APPLAB 0003-6951. 10.1063/1.1755421
- S. Y. Wang, B. L. Cheng, C. Wang, S. Y. Dai, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang, Appl. Phys. Lett. APPLAB 0003-6951 84, 4116 (2004). 10.1063/1.1755421
- (2004) Appl. Phys. Lett. , vol.84 , pp. 4116
- Wang, S.Y.¹ Cheng, B.L.² Wang, C.³ Dai, S.Y.⁴ Lu, H.B.⁵ Zhou, Y.L.⁶ Chen, Z.H.⁷ Yang, G.Z.⁸

34
- 0040610927
- MSBTEK 0921-5107. 10.1016/S0921-5107(98)00303-1
- S. Saha and S. B. Krupanidhi, Mater. Sci. Eng., B MSBTEK 0921-5107 57, 135 (1999). 10.1016/S0921-5107(98)00303-1
- (1999) Mater. Sci. Eng., B , vol.57 , pp. 135
- Saha, S.¹ Krupanidhi, S.B.²

35
- 63549118703
- APPLAB 0003-6951. 10.1063/1.3106635
- H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, and C. Liu, Appl. Phys. Lett. APPLAB 0003-6951 94, 122904 (2009). 10.1063/1.3106635
- (2009) Appl. Phys. Lett. , vol.94 , pp. 122904
- Wu, H.¹ Yuan, J.² Peng, T.³ Pan, Y.⁴ Han, T.⁵ Liu, C.⁶

36
- 0036732159
- 3 thin films by Ni or Mn doping
- DOI 10.1063/1.1495526
- K. H. Ahn, S. Baik, and S. S. Kim, J. Appl. Phys. JAPIAU 0021-8979 92, 2651 (2002). 10.1063/1.1495526 (Pubitemid 35037873)
- (2002) Journal of Applied Physics , vol.92 , Issue.5 , pp. 2651
- Ahn, K.H.¹ Baik, S.² Kim, S.S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.