Microwave dielectric and Raman scattering studies on bismuth zinc niobate thin films

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Sudheendran, K ^a   Raju, K C James ^a   Singh, Manoj K ^b   Katiyar, Ram S ^b  

^a UNIVERSITY OF HYDERABAD   (India)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CRYSTALLITE SIZE; CRYSTALLITES; DIELECTRIC PROPERTIES; ELECTROMAGNETIC WAVES; FUSED SILICA; MICROWAVES; NANOCRYSTALLINE ALLOYS; NIOBIUM COMPOUNDS; OXYGEN; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; RAMAN SCATTERING; SEMICONDUCTING BISMUTH COMPOUNDS; SILICA; SOLIDS; THICK FILMS; THIN FILMS; ZINC;

AS DEPOSITED; ATOMIC FORCES; BAND FREQUENCIES; BISMUTH ZINC NIOBATE; DEPOSITION CHAMBERS; FUSED SILICA SUBSTRATES; LOCAL SYMMETRIES; LOSS TANGENTS; LOW FREQUENCIES; MICROWAVE DIELECTRIC PROPERTIES; MICROWAVE DIELECTRICS; OXYGEN PRESSURES; POSTDEPOSITION ANNEALING; PULSED LASERS; RAMAN MODES; X-RAY DIFFRACTIONS;

AMORPHOUS FILMS;

EID: 57049167028     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2991289     Document Type: Article

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