Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages 595-607

  Rommel, M ^a   Spoldi, G ^a   Yanev, V ^a   Beuer, S ^a   Amon, B ^a   Jambreck, J ^a   Petersen, S ^a   Bauer, A J ^a   Frey, L ^a,b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b Department of Electron Devices ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROPHOBICITY; IONS; MASS SPECTROMETRY; SCANNING PROBE MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

IRRADIATED AREA; IRRADIATED STRUCTURES; PROCESSING PARAMETERS; SCANNING PROBE MICROSCOPY TECHNIQUES; SCANNING SPREADING RESISTANCE MICROSCOPY; SECONDARY ION MASS SPECTROSCOPY; STRUCTURE SIZES; VACUUM CHAMBERS;

ION BEAMS;

EID: 77952998357     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3431085     Document Type: Article

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