Low-energy focused-ion-beam shape observation and its noise reduction for nanofabrication

Microelectronic Engineering

Volumn 40, Issue 1, 1998, Pages 21-34

  Itoh, M ^a   Hirayama, Y ^b   Tarucha, S ^b  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Aperture; FIB; Implantation induced damage; Lens column; Mesoscopic devices; Noise

Indexed keywords

CATHODES; ELECTRON MICROSCOPY; ETCHING; ION IMPLANTATION; LUMINESCENCE; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; SURFACE ROUGHNESS;

FOCUSED ION BEAM (FIB) SYSTEMS; IMPLANTATION INDUCED DAMAGE; SECONDARY ELECTRON MICROSCOPY (SEM);

ION BEAMS;

EID: 0031998348     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00182-2     Document Type: Article

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