Scanning capacitance microscopy investigations of focused ion beam damage in silicon

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 19, Issue 1-2, 2003, Pages 178-182

  Brezna, W ^a   Wanzenbock H ^a   Lugstein, A ^a   Bertagnolli, E ^a   Gornik, E ^a   Smoliner, J ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Beam shape; Focused ion beam; Ion damage; Scanning capacitance microscopy

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; POLYSILICON; SCANNING; TRANSMISSION ELECTRON MICROSCOPY;

SCANNING CAPACITANCE MICROSCOPY (SCM);

ION BEAMS;

EID: 0042009560     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(03)00330-8     Document Type: Conference Paper

References (8)

1. Melngailis J. J. Vac. Sci. Technol. B. 5:1987;469.
2. Lehrer C., Frey L., Petersen S., Ryssel H. J. Vac. Sci. Technol. B. 19:2001;2533.
3. Winzell T., Anand S., Maximov I., Sarwe E.L., Graczyk M., Montelius L., Whitlow H.J. Nucl. Instrum. Methods B. 173:2001;447.
4. Bugg D.D., King P.J. J. Phys. E. 21:1988;147.
5. O'Malley M.L., Timp G.L., Moccio S.V., Garno J.P., Kleiman R.N. Appl. Phys. Lett. 74:1999;272.
6. Smoliner J., Basnar B., Golka S., Gornik E., Löffler B., Schatzmayr M., Enichlmair H. Appl. Phys. Lett. 79:2001;3182.
7. Rose P.D., Brown S.J., Jones G.A.C., Ritchie D.A. Microelectron. Eng. 41/42:1998;229.
8. A. Lugstein, W. Brezna, E. Bertagnolli, IEEE International Reliability Physics Symposium IRPS Proceedings, IEEE Catalog No. 02CH 37320, Dallas, TX, 2002, p. 369.