Defects and gallium - Contamination during focused ion beam micro machining

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 695-698

  Lehrer, C ^a   Frey, L ^a   Petersen, S ^a   Mizutam, M ^b   Takai, M ^b   Ryssel, H ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; BEAM DIAMETERS; DEFECT GENERATION; FOCUSED-ION-BEAM SYSTEM; HIGH DOSE; HIGH RESOLUTION; ION-BEAM APPLICATIONS; LOW DOSE; LOW ENERGIES; MONTE CARLO SIMULATION; PHYSICAL SPUTTERING; SECONDARY ELECTRONS; SENSITIVE ANALYSIS; STRUCTURAL DIMENSIONS; SUB-100 NM; SURFACE CONCENTRATION; TEM;

ASTATINE; BEAM PLASMA INTERACTIONS; COMPUTER SIMULATION; DEFECTS; FOCUSED ION BEAMS; INSPECTION; ION BOMBARDMENT; ION IMPLANTATION; MICROMACHINING; MONTE CARLO METHODS; QUALITY ASSURANCE; SURFACES;

FAILURE ANALYSIS;

EID: 78649873963     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924248     Document Type: Conference Paper

References (14)

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