Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 4037-4042

  Lugstein, A ^a   Basnar, B ^a   Hobler, G ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-DEPENDENT; BEAM PROFILES; BEAM SHAPES; CURRENT DENSITY PROFILES; GAAS; HIGH SENSITIVITY; ION BEAM EXPOSURE; ION DOSE; MILLING DEPTH; NANO SCALE; NANODOTS; PROFILE EXTRACTION; RADIAL POSITION; REDEPOSITION; SCALING FACTORS; SINGLE ION; SPATIAL VARIATIONS; SPUTTERING YIELDS; SUBSTRATE MATERIAL; SURFACE CONTOUR; TO EFFECT;

ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDE; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM;

FOCUSED ION BEAMS;

EID: 18644379509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1505685     Document Type: Article

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