Focused ion beam implantation of Ga in Si and Ge: Fluence-dependent retention and surface morphology

Surface and Interface Analysis

Volumn 40, Issue 11, 2008, Pages 1415-1422

  Gnaser, Hubert ^a   Brodyanski, Alexander ^a   Reuscher, Bernhard ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

Atomic force microscopy; Focused ion beams; Ion implantation; Secondary ion mass spectrometry

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; BEAM PLASMA INTERACTIONS; CESIUM; CESIUM COMPOUNDS; CONCENTRATION (PROCESS); DEPTH PROFILING; ELECTROLYSIS; FOCUSED ION BEAMS; GERMANIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; IMAGE SEGMENTATION; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; IONS; MASS SPECTROMETRY; MICROSCOPIC EXAMINATION; SCANNING PROBE MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; YTTERBIUM COMPOUNDS;

ATOMIC FORCES; CONCENTRATION DISTRIBUTIONS; CRYSTALLINE SI; FLUENCE; FLUENCES; GA CONTENTS; GRADUAL CHANGES; IMPLANTED REGIONS; ION BEAM IMPLANTATIONS; PEAK CONCENTRATIONS; PRIMARY IONS; SATURATION LEVELS; SIMS DEPTH PROFILING; SURFACE COMPOSITIONS;

SURFACE MORPHOLOGY;

EID: 55649119178     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2915     Document Type: Article

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