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Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

(7) Deng, Dongmei a Yu, Naisen a Wang, Yong a Zou, Xinbo a Kuo, Hao Chung b Chen, Peng a Lau, Kei May a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIZED ALUMINUM OXIDE; ETCH MASK; INTERPORE DISTANCES; LATERAL OVERGROWTH; LIGHT OUTPUT POWER; MICRO-SCALES; NANO SCALE; SI SUBSTRATES; SI(111) SUBSTRATE;

ALUMINA; LIGHT EMISSION; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

LIGHT EMITTING DIODES;

EID: 77952974769 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427438 Document Type: Article

Times cited : (27)

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