Plasma impacts to an O-SiC low-k barrier film

Journal of the Electrochemical Society

Volumn 151, Issue 8, 2004, Pages

  Chen, Wei ^a   Han, Qingyuan ^b   Most, Robert ^a   Waldfried, Carlo ^b   Escorcia, Orlando ^b   Berry, Ivan ^b  

^a DOW CORNING CORPORATION   (United States)

^b AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON-DOPED-OXIDE (CDO); DIELECTRIC BREAKDOWN VOLTAGE; PLASMA DAMAGES; TRIMETHOXYSILANE;

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CONTACT ANGLE; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRUCTURE (COMPOSITION); SURFACE PHENOMENA; SURFACE ROUGHNESS;

SILICON COMPOUNDS;

EID: 4344586718     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1768949     Document Type: Article

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