Why the universal mobility is not

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1327-1333

  Cristoloveanu, Sorin ^a   Rodriguez, Noel ^b   Gamiz, Francisco ^b  

^a MINATEC   (France)

^b UNIVERSITY OF GRANADA   (Spain)

Author keywords

Carrier mobility; Effective field; Silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs); Ultrathin silicon films; Universal mobility

Indexed keywords

CARRIER MOBILITY; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE FILMS; OXIDE SEMICONDUCTORS; TRANSISTORS; ULTRATHIN FILMS;

CARRIER DISTRIBUTIONS; DOUBLE-GATE DEVICE; EFFECTIVE FIELD; EFFECTIVE MOBILITIES; FIELD REPRESENTATIONS; STANDARD DEFINITIONS; ULTRATHIN SILICON; ULTRATHIN SILICON FILMS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 77952741736     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2046109     Document Type: Article

References (24)

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