Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method

Solid-State Electronics

Volumn 51, Issue 2, 2007, Pages 245-251

  Ohata, A ^a   Casse M ^b   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

Mobility; SOI MOSFETs; Split CV; Thin gate oxide; Ultrathin SOI

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; SILICA; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

BACK CHANNEL MOBILITY; SPLIT CV METHOD; THIN GATE OXIDE; ULTRATHIN SOI;

MOSFET DEVICES;

EID: 33847337431     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.015     Document Type: Article

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