Method for extraction of η parameter characterising eff against Eeff curves in FD-SOI Si MOS devices

Electronics Letters

Volumn 45, Issue 12, 2009, Pages 655-657

  Bennamane, K ^a,b   Ghibaudo, G ^a   Benfdila, A ^b  

^a IMEP LAHC   (France)

^b UNIVERSITÉ MOULOUD MAMMERI   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION METHOD; GATE STACKS; NOVEL METHODS; SI MOS TRANSISTORS;

FINITE DIFFERENCE METHOD; MOS DEVICES; SILICON COMPOUNDS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

SEMICONDUCTING SILICON;

EID: 67149103778     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.0044     Document Type: Article

References (5)

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2. Tsutsui, G., Saitoh, M., Nagumo, T., and Hiramoto, T.: Experimental study of universality of mobility behavior in ultra thin body metal oxide semiconductor field effect transistors , Jpn. J. Appl. Phys., 2005, 44, (6A), p. 3889-3892 10.1143/JJAP.44.3889 0021-4922
3. Huang, C.L., and Gildenblat, G.S.: Measurements and modeling of the N-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300K , IEEE Trans. Electron Devices, 1990, 31, (13), p. 1289-1300 0018-9383
4. Emrani, A., Ghibaudo, G., and Balestra, F.: On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers , Solid-State Electron., 1994, 37, (1), p. 111-113 10.1016/0038-1101(94) 90113-9 0038-1101
5. Lim, H.K., and Fossum, J.: Current voltage characteristics of thin film SOI MOSFETs in strong inversion , IEEE Trans. Electron Devices, 1984, 31, (2), p. 401-408 0018-9383 (Pubitemid 14561937)