Mosfet models, quantum mechanical effects and modeling approaches: A review

Journal of Semiconductor Technology and Science

Volumn 10, Issue 1, 2010, Pages 20-27

  Chaudhry, Amit ^a   Roy, J N ^b  

^a PANJAB UNIVERSITY   (India)

^b IEEE   (India)

Author keywords

BSIM; MOS models; Quantum mechanical effects

Indexed keywords

INTEGRATED CIRCUITS; METALS; QUANTUM ELECTRONICS; QUANTUM THEORY;

BSIM; COMPACT MODEL; METAL-OXIDE-SILICON FIELD EFFECT TRANSISTORS; MODEL APPROACH; MOSFET MODEL; QUANTUM EFFECTS; QUANTUM MECHANICAL EFFECTS; SHORT CHANNELS;

FIELD EFFECT TRANSISTORS;

EID: 77952610185     PISSN: 15981657     EISSN: None     Source Type: Journal    
DOI: 10.5573/JSTS.2010.10.1.020     Document Type: Article

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