Infrared spectroscopic near-field mapping of single nanotransistors

Nanotechnology

Volumn 21, Issue 23, 2010, Pages

  Huber, A J ^a,b   Wittborn, J ^c   Hillenbrand, R ^a,d  

^a CIC NANOGUNE   (Spain)

^b Neaspec GmbH   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d BASQUE FOUNDATION FOR SCIENCE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TRANSISTORS; DIELECTRIC VALUES; INFRARED SPECTROSCOPIC; MATERIAL RECOGNITION; MODEL CALCULATIONS; NANO TRANSISTORS; NANO-SCALE MATERIALS; NEAR FIELD INTERACTIONS; NEAR FIELD MICROSCOPY; NEAR-FIELD; NON-INVASIVE; PHONON-POLARITON; RESEARCH AND DEVELOPMENT; SCATTERING-TYPE SCANNING NEAR-FIELD OPTICAL MICROSCOPY (S-SNOM); SINGLE TRANSISTORS; SPECTRAL SIGNATURE; SPECTROSCOPIC MATERIALS;

FAILURE ANALYSIS; PHONONS; QUALITY ASSURANCE; REENGINEERING; REVERSE ENGINEERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON COMPOUNDS; TRANSISTORS;

NEAR FIELD SCANNING OPTICAL MICROSCOPY;

EID: 77952401817     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/23/235702     Document Type: Article

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