Infrared near-field imaging of implanted semiconductors: Evidence of a pure dielectric contrast

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 575-577

  Lahrech, A ^a   Bachelot, R ^a,b   Gleyzes, P ^a   Boccara, A C ^a  

^a INSTITUT LANGEVIN   (France)

^b UNIVERSITÉ DE TECHNOLOGIE DE TROYES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMS; BORON; CALCULATIONS; INFRARED IMAGING; ION IMPLANTATION; MATHEMATICAL MODELS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON;

DIELECTRIC CONTRAST; DRUDE MODEL; SCANNING NEAR FIELD OPTICAL MICROSCOPE;

INFRARED INSTRUMENTS;

EID: 0031552789     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119798     Document Type: Article

References (9)

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