Terahertz near-field nanoscopy of mobile carriers in single semiconductor nanodevices

Nano Letters

Volumn 8, Issue 11, 2008, Pages 3766-3770

  Huber, A J ^a,b   Keilmann, F ^a   Wittborn, J ^c   Aizpurua, J ^d   Hillenbrand, R ^a,b  

^a MAX PLANCK INSTITUTE OF BIOCHEMISTRY   (Germany)

^b CIC NANOGUNE   (Spain)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; NANOSTRUCTURED MATERIALS;

ATOMIC FORCE MICROSCOPES; DYNAMIC CALCULATIONS; MOBILE CARRIERS; NANO DEVICES; NANO-METER SCALE; NANOSCALE RESOLUTIONS; NEAR FIELDS; NEAR-FIELD MICROSCOPIES; QUANTITATIVE STUDIES; SEMICONDUCTOR NANODEVICES; SEMICONDUCTOR TRANSISTORS; SINGLE ELECTRONS; SPATIAL RESOLUTIONS; TERAHERTZ; THZ FIELDS; TIP APICES;

SEMICONDUCTOR MATERIALS;

NANOMATERIAL;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; METHODOLOGY; SEMICONDUCTOR; TERAHERTZ SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; SEMICONDUCTORS; TERAHERTZ SPECTROSCOPY;

EID: 57049102116     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl802086x     Document Type: Article

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