Infrared nanoscopy of strained semiconductors

Nature Nanotechnology

Volumn 4, Issue 3, 2009, Pages 153-157

  Huber, A J ^a,b,c   Ziegler, A ^b   Kock T ^d   Hillenbrand, R ^a,b,c  

^a CIC NANOGUNE   (Spain)

^b MAX PLANCK INSTITUTE OF BIOCHEMISTRY   (Germany)

^c UNIVERSITY OF MUNICH   (Germany)

^d MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; GEOMETRICAL OPTICS; MAPPING; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SILICON CARBIDE;

DEVICE CHARACTERIZATION; EXPERIMENTAL EVIDENCE; MECHANICAL AND ELECTRONIC PROPERTIES; NANO-SCALE MATERIALS; NEAR FIELD MICROSCOPY; POLAR SEMICONDUCTORS; SEMI-QUANTITATIVE ANALYSIS; SILICON CARBIDE CRYSTALS;

STRAIN;

ARTICLE; IMAGE ANALYSIS; IMAGING SYSTEM; INFRARED RADIATION; NEAR INFRARED SPECTROSCOPY; PRIORITY JOURNAL; SCANNING NEAR FIELD OPTICAL MICROSCOPY; SEMICONDUCTOR;

EID: 62249144307     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2008.399     Document Type: Article

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