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Volumn 200, Issue 1-2, 1999, Pages 106-111

Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL WHISKERS; GOLD; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON;

EID: 0033115607     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01408-0     Document Type: Article
Times cited : (39)

References (21)
  • 6
    • 0344431781 scopus 로고
    • Principles of the vapor growth of single crystals
    • C.H. Goodman. New York: Plenum Press
    • Kaldis E. Principles of the vapor growth of single crystals. Goodman C.H. Crystal Growth, Theory and Techniques. 1972;Plenum Press, New York.
    • (1972) Crystal Growth, Theory and Techniques
    • Kaldis, E.1
  • 14
    • 0003754506 scopus 로고
    • R.K. Willendson, Goering H.L. New York: Reinhold
    • Sangster R.S. Willendson R.K., Goering H.L. Compound Semiconductors. 1:1962;Reinhold, New York.
    • (1962) Compound Semiconductors , vol.1
    • Sangster, R.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.