Critical condition for growth of silicon nanowires

Journal of Applied Physics

Volumn 102, Issue 9, 2007, Pages

  Dhalluin, Florian ^a,b   Desŕ, Pierre J ^b   Den Hertog, Martien I ^a   Rouvìre, Jean Luc ^a   Ferret, Pierre ^b   Gentile, Pascal ^a   Baron, Thierry ^a  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; PARTIAL PRESSURE; SILICON;

NANOWIRES RADIUS; SIZE CONTROL; THERMODYNAMICAL MODEL;

NANOWIRES;

EID: 37549027666     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2811935     Document Type: Article

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